Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers
	Xu Y (Xu Ying); Hu ZH (Hu Zhihua); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Zeng XB (Zeng Xiangbo); Hao HY (Hao Huiying); Liao XB (Liao Xianbo); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo); Hu, ZH, New Univ Lisbon, Dept Mat Sci, Monte Caparica, P-2829516 Caparica, Almada, Portugal. 电子邮箱地址: zhu@uninova.pt
	2006
会议名称	21st International Conference on Amorphous and Nanocrystalline Semiconductors
会议录名称	JOURNAL OF NON-CRYSTALLINE SOLIDS
页码	352 (9-20): 1972-1975
会议日期	SEP 04-09, 2005
会议地点	Lisbon, PORTUGAL
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-3093
部门归属	new univ lisbon, dept mat sci, p-2829516 caparica, almada, portugal; new univ lisbon, cemop, p-2829516 caparica, almada, portugal; new univ lisbon, uninova, fac sci & technol, p-2829516 caparica, almada, portugal; chinese acad sci, inst semicond, beijing 100083, peoples r china; kunming inst phys, kunming, yunnan, peoples r china
摘要	Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.
关键词	Silicon
学科领域	半导体材料
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10014
专题	中国科学院半导体研究所（2009年前）
通讯作者	Hu, ZH, New Univ Lisbon, Dept Mat Sci, Monte Caparica, P-2829516 Caparica, Almada, Portugal. 电子邮箱地址: zhu@uninova.pt
推荐引用方式 GB/T 7714	Xu Y ,Hu ZH ,Diao HW ,et al. Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:352 (9-20): 1972-1975.

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