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题名: Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers
作者: Xu Y (Xu Ying);  Hu ZH (Hu Zhihua);  Diao HW (Diao Hongwei);  Cai Y (Cai Yi);  Zhang SB (Zhang Shibin);  Zeng XB (Zeng Xiangbo);  Hao HY (Hao Huiying);  Liao XB (Liao Xianbo);  Fortunato E (Fortunato Elvira);  Martins R (Martins Rodrigo)
出版日期: 2006
会议日期: SEP 04-09, 2005
摘要: Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/1T0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 mu m)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 Elsevier B.V. All rights reserved.
会议名称: 21st International Conference on Amorphous and Nanocrystalline Semiconductors
KOS主题词: Silicon
会议文集: JOURNAL OF NON-CRYSTALLINE SOLIDS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Xu, Y (Xu, Ying); Hu, ZH (Hu, Zhihua); Diao, HW (Diao, Hongwei); Cai, Y (Cai, Yi); Zhang, SB (Zhang, Shibin); Zeng, XB (Zeng, Xiangbo); Hao, HY (Hao, Huiying); Liao, XB (Liao, Xianbo); Fortunato, E (Fortunato, Elvira); Martins, R (Martins, Rodrigo) .Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers .见:ELSEVIER SCIENCE BV .JOURNAL OF NON-CRYSTALLINE SOLIDS,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS , JUN 15 2006,352 (9-20): 1972-1975
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