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题名: Defect influence on luminescence efficiency of GaN-based LEDs
作者: Li SP (Li Shuping);  Fang ZL (Fang Zhilai);  Chen HY (Chen Hangyang);  Li JC (Li Jinchai);  Chen XH (Chen Xiaohong);  Yuan XL (Yuan Xiaoli);  Sekiguchi T (Sekiguchi Takashi);  Wang QM (Wang Qiming);  Kang JY (Kang Junyong)
出版日期: 2006
会议日期: SEP 13-19, 2005
摘要: Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. The pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. The cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. The electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 Elsevier Ltd. All rights reserved.
会议名称: 11th Conference on Defects Recognition Imaging and Physics in Semiconductors
KOS主题词: Defects
会议文集: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Li, SP (Li, Shuping); Fang, ZL (Fang, Zhilai); Chen, HY (Chen, Hangyang); Li, JC (Li, Jinchai); Chen, XH (Chen, Xiaohong); Yuan, XL (Yuan, Xiaoli); Sekiguchi, T (Sekiguchi, Takashi); Wang, QM (Wang, Qiming); Kang, JY (Kang, Junyong) .Defect influence on luminescence efficiency of GaN-based LEDs .见:ELSEVIER SCI LTD .MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND ,FEB-JUN 2006,9 (1-3): 371-374
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