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题名: Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate
作者: Zhou HY;  Qu SC;  Wang ZG;  Liang LY;  Cheng BC;  Liu JP;  Peng WQ
出版日期: 2006
会议日期: SEP 13-19, 2005
摘要: Self-ordered porous alumina films on a semi-insulated GaAs substrate were prepared in oxalic acid aqueous solutions by three-step anodization. The I-t curve of anodization process was recorded to observe time effects of anodization. Atomic force microscopy was used to investigate structure and morphology of alumina films. It was revealed that the case of oxalic acid resulted in a self-ordered porous structure, with the pore diameters of 60-70 nm, the pore density of the order of about 10(10) pore cm(-2), and interpore distances of 95-100nm. At the same time the pore size and shape change with the pore widening time. Field-enhanced dissolution model and theory of deformation relaxation combined were brought forward to be the cause of self-ordered pore structure according to I-t curve of anodization and structure characteristics of porous alumina films. (c) 2006 Elsevier Ltd. All rights reserved.
会议名称: 11th Conference on Defects Recognition Imaging and Physics in Semiconductors
会议文集: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhou, HY (Zhou, H. Y.); Qu, SC (Qu, S. C.); Wang, ZG (Wang, Z. G.); Liang, LY (Liang, L. Y.); Cheng, BC (Cheng, B. C.); Liu, JP (Liu, J. P.); Peng, WQ (Peng, W. Q.) .Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate .见:ELSEVIER SCI LTD .MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND ,FEB-JUN 2006,9 (1-3): 337-340
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