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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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The photon scanning tunneling microscope and its applications
会议论文
JOURNAL OF TRACE AND MICROPROBE TECHNIQUES, 15 (4), GUANGZHOU, PEOPLES R CHINA, AUG 29-SEP 02, 1995
作者:
Yao JE
;
Guo N
;
Gao S
;
Wu SF
;
Xia DK
;
Shang GY
;
Chu SC
;
Li CJ
;
He J
;
Xu SH
;
Yao JE Acad Sinica Beijing Lab Electron Microscopy POB 2724 Beijing 100080 Peoples R China.
Adobe PDF(1203Kb)
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浏览/下载:1173/177
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提交时间:2010/11/15
Photon Scanning Tunneling Microscope
Scanning Near-field Optical Microscope
Optical Microscopy
Heteroepitaxy of cubic GaN: influence of interface structure
会议论文
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, (157), OXFORD, ENGLAND, APR 07-10, 1997
作者:
Trampert A
;
Brandt O
;
Yang H
;
Yang B
;
Ploog KH
;
Trampert A Paul Drude Inst Festkorperelekt Hausvogteipl 5-7 D-10117 Berlin Germany.
Adobe PDF(317Kb)
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浏览/下载:1226/219
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提交时间:2010/11/15
Molecular-beam Epitaxy
Gan/gaas(001)
Growth
The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix
会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:
Wang ZM
;
Feng SL
;
Lu ZD
;
Zhao Q
;
Yang XP
;
Chen ZG
;
Xu ZY
;
Zheng HZ
;
Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(2780Kb)
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浏览/下载:1163/142
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提交时间:2010/11/15
Growth
Interdiffusion
Islands
Scale
Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix
会议论文
APPLIED SURFACE SCIENCE, 123, CARDIFF, WALES, JUN 23-27, 1997
作者:
Chen YH
;
Yang Z
;
Wang ZG
;
Xu B
;
Liang JB
;
Qian JJ
;
Chen YH Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong.
Adobe PDF(241Kb)
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浏览/下载:1303/301
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提交时间:2010/11/15
Znse/gaas Interface
States
Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition
会议论文
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 177, CAIRNS, AUSTRALIA, JUL 27-AUG 01, 1997
作者:
Yao ZY
;
Jiang H
;
Liu ZK
;
Huang DD
;
Qin FG
;
Zhu SC
;
Sun YX
;
Zhu SC Peking Univ Dept Phys Beijing 100871 Peoples R China.
Adobe PDF(166Kb)
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浏览/下载:1329/281
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提交时间:2010/11/15
Thin Films
Saturation Magnetization
Uniaxial Anisotropy
Electronic investigation of self-organized InAs quantum dots
会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:
Chen F
;
Feng SL
;
Yang XZ
;
Zhao Q
;
Wang ZM
;
Wen LS
;
Chen F Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(2402Kb)
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浏览/下载:960/127
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提交时间:2010/11/15
Carrier Relaxation
Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots
会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:
Wang ZM
;
Feng SL
;
Yang XP
;
Deng YM
;
Lu ZD
;
Xu ZY
;
Chen ZG
;
Zheng HZ
;
Han PD
;
Wang FL
;
Duan XF
;
Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(2139Kb)
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浏览/下载:1192/149
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提交时间:2010/11/15
Gaas
Growth
Material transport in self-assembled InAs/GaAs quantum dot ensemble
会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:
Wang ZM
;
Feng SL
;
Yang XP
;
Lu ZD
;
Xu ZY
;
Chen ZG
;
Zheng HZ
;
Wang FL
;
Gao M
;
Han PD
;
Duan XF
;
Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(2906Kb)
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  |  
浏览/下载:1263/171
  |  
提交时间:2010/11/15
Growth
Transition
Gaas
High-concentration hydrogen in unintentionally doped GaN
会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
作者:
Zhang JP
;
Wang XL
;
Sun DZ
;
Li XB
;
Kong MY
;
Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhangjp@red.semi.ac.cn
Adobe PDF(109Kb)
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浏览/下载:1157/289
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提交时间:2010/11/15
Gallium Nitride
Gas Source Molecular Beam Epitaxy
Hydrogen
Autodoping
Films
Observation of defects in GaN epilayers
会议论文
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160, TEMPLIN, GERMANY, SEP 07-10, 1997
作者:
Kang JY
;
Liu XL
;
Ogawa T
;
Kang JY Gakushuin Univ Dept Phys Tokyo 171 Japan.
Adobe PDF(235Kb)
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  |  
浏览/下载:1256/215
  |  
提交时间:2010/11/15
Scattering
Sapphire
Growth
Characterization of GaSb substrate wafers for MOCVD III-V antimonides
会议论文
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160, TEMPLIN, GERMANY, SEP 07-10, 1997
作者:
Peng RW
;
Ding YQ
;
Xu CM
;
Wang XG
;
Peng RW Acad Sinica Shanghai Inst Met Shanghai 200050 Peoples R China.
Adobe PDF(240Kb)
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  |  
浏览/下载:1188/185
  |  
提交时间:2010/11/15
Vapor-phase Epitaxy
Growth
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate
会议论文
COMPOUND SEMICONDUCTORS 1997, 156, SAN DIEGO, CALIFORNIA, SEP 08-11, 1997
作者:
Jiang DS
;
Ramsteiner M
;
Brandt O
;
Ploog KH
;
Tews H
;
Graber A
;
Averbeck R
;
Riechert H
;
Jiang DS Paul Drude Inst Solid State Elect D-10117 Berlin Germany.
Adobe PDF(268Kb)
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  |  
浏览/下载:1374/249
  |  
提交时间:2010/11/15
Shallow Donors
MOVPE growth of GaN and LED on (111) MgAl2O4
会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
作者:
Duan SK
;
Teng XG
;
Wang YT
;
Li GH
;
Jiang HX
;
Han P
;
Lu DC
;
Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
Adobe PDF(150Kb)
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浏览/下载:1380/364
  |  
提交时间:2010/11/15
Gan
Mgal2o4
Movpe
Led
Diodes
Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser
会议论文
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37 (6B), TOKYO, JAPAN, OCT 07-09, 1997
作者:
Pan Z
;
Zhang Y
;
Du Y
;
Wu RH
;
Pan Z Tokyo Inst Technol Precis & Intelligence Lab Midori Ku 4259 Nagatsuta Yokohama Kanagawa 2268503 Japan.
Adobe PDF(465Kb)
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浏览/下载:1078/257
  |  
提交时间:2010/11/15
Vcsel
Selective Oxidation
Stability
Wet Oxidation
Microstructure
The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy
会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
作者:
Liu XL
;
Wang LS
;
Lu DC
;
Wang D
;
Wang XH
;
Lin LY
;
Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlliu@red.semi.ac.cn
Adobe PDF(122Kb)
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收藏
  |  
浏览/下载:1387/401
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提交时间:2010/11/15
Movpe
Gan
Gan Buffer
Heavy Si-doping
High-field ferromagnetic resonance in fine particles
会议论文
PHYSICA B-CONDENSED MATTER, 246, SYDNEY, AUSTRALIA, AUG 04-06, 1997
作者:
Respaud M
;
Goiran M
;
Yang F
;
Broto JM
;
Ely TO
;
Amiens C
;
Chaudret B
;
Askenazy S
;
Broto JM Inst Natl Sci Appl SNCMP Complexe Sci Rangueil F-31077 Toulouse France. 电子邮箱地址: Broto@insatlse.fr
Adobe PDF(101Kb)
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  |  
浏览/下载:1198/187
  |  
提交时间:2010/11/15
High-field Ferromagnetic Resonance
Fine Particles
Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices
会议论文
MICROELECTRONIC ENGINEERING, 43-4, LISBON, PORTUGAL, MAY 19-21, 1997
作者:
Liu J
;
Gornik E
;
Xu SJ
;
Zheng HZ
;
Liu J Vienna Tech Univ Inst Festkorperelekt Floragasse 7-1 A-1040 Vienna Austria. 电子邮箱地址: j.liu.20@bham.ac.uk
Adobe PDF(267Kb)
  |  
收藏
  |  
浏览/下载:1157/190
  |  
提交时间:2010/11/15
Gaas/alas
Superlattices
Transport
Tunnelling
Landau Level
Negative Differential Conductivity
Low-field Mobility
Semiconductor Superlattice
Temperature-dependence
Conductance
Transport
Localization
Minibands
Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures
会议论文
PHYSICA E, 2 (1-4), SANTA BARBARA, CALIFORNIA, JUL 14-18, 1997
作者:
Wang YJ
;
Nickel HA
;
McCombe BD
;
Peeters FM
;
Shi JM
;
Hai GQ
;
Wu XG
;
Eustis TJ
;
Schaff W
;
Wang YJ Florida State Univ Natl High Magenet Field Lab 1800 E Paul Dirac Dr Tallahassee FL 32306 USA.
Adobe PDF(116Kb)
  |  
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  |  
浏览/下载:1370/186
  |  
提交时间:2010/11/15
Resonant Magnetopolaron Effects
Gaas/algaas Quantum Well Structures
Interface Phonons
Electron-optical-phonon Interaction
Polaron-cyclotron-resonance
Phonon Modes
Gaas
Heterostructures
Superlattices
Electrons
Formation mechanism of electric field domains
会议论文
MICROELECTRONIC ENGINEERING, 43-4, LISBON, PORTUGAL, MAY 19-21, 1997
作者:
Sun BQ
;
Liu ZX
;
Jiang DS
;
Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 10083 Peoples R China.
Adobe PDF(287Kb)
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  |  
浏览/下载:1003/210
  |  
提交时间:2010/11/15
Electric Field Domains
Gamma-gamma Resonant Tunnelling
Gamma-x Resonant Tunnelling
High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures
会议论文
PHYSICA B-CONDENSED MATTER, 256, NIJMEGEN, NETHERLANDS, AUG 10-14, 1998
作者:
Wang YJ
;
Jiang ZX
;
McCombe BD
;
Peeters FM
;
Wu XG
;
Hai GQ
;
Eustis TJ
;
Schaff W
;
Wang YJ Florida State Univ Natl High Magnet Field Lab Tallahassee FL 32310 USA. 电子邮箱地址: wang@magnet.fsu.edu
Adobe PDF(295Kb)
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浏览/下载:1421/284
  |  
提交时间:2010/11/15
Cyclotron Resonance
Electron-phonon Interaction
Electron-electron Interaction
High Magnetic Fields
Exchange Enhancement
Gaas
Heterostructures
Gas
Limit
Heterojunctions
Polarons
Modes
Level