SEMI OpenIR

Browse/Search Results:  1-5 of 5 Help

  Show only claimed items
Selected(0)Clear Items/Page:    Sort:
GaAs 基图形化衬底制备与纳米结构控位生长研究 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  金兰
Adobe PDF(3496Kb)  |  Favorite  |  View/Download:843/45  |  Submit date:2011/06/12
无权访问的条目 期刊论文
Authors:  Wang ZJ (Wang Zhijie);  Qu SC (Qu Shengchun);  Zeng XB (Zeng Xiangbo);  Liu JP (Liu Junpeng);  Tan FR (Tan Furui);  Jin L (Jin Lan);  Wang ZG (Wang Zhanguo);  Qu, SC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: qsc@semi.ac.cn
Adobe PDF(396Kb)  |  Favorite  |  View/Download:1621/520  |  Submit date:2010/10/11
无权访问的条目 期刊论文
Authors:  Tan FR (Tan Furui);  Qu SC (Qu Shengchun);  Zeng XB (Zeng Xiangbo);  Zhang CS (Zhang Changsha);  Shi MJ (Shi Mingji);  Wang ZJ (Wang Zhijie);  Jin L (Jin Lan);  Bi Y (Bi Yu);  Cao J (Cao Jie);  Wang ZG (Wang, Zhanguo);  Hou YB (Hou Yanbing);  Teng F (Teng Feng);  Feng ZH (Feng, Zhihui);  Qu, SC, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsc@semi.ac.cn
Adobe PDF(1959Kb)  |  Favorite  |  View/Download:1572/377  |  Submit date:2010/03/08
制备不同应力密度分布的GaAs图形化衬底的方法 专利
专利类型: 发明, 专利号: CN102169820A, 公开日期: 2012-08-29, 2012-08-29, 2012-08-29, 2012-08-29
Inventors:  金兰;  曲胜春;  徐波
Adobe PDF(363Kb)  |  Favorite  |  View/Download:1989/453  |  Submit date:2012/08/29
广谱高吸收的太阳能电池结构及其制作方法 专利
专利类型: 发明, 公开日期: 2012-07-11
Inventors:  刘孔;  曲胜春;  谭付瑞;  唐爱伟;  金兰;  张君梦;  徐文清
Adobe PDF(434Kb)  |  Favorite  |  View/Download:526/96  |  Submit date:2014/10/31