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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中科院半导体照明研发... [1]
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AlGaN/GaN MOS-HFET功率开关器件制备技术研究
学位论文
, 北京: 中国科学院大学, 2016
Authors:
赵勇兵
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Submit date：2016/06/01
Algan/gan Hfet
特征导通电阻
击穿电压
增强型器件
阈值电压
