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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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半导体材料科学中心 [2]
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段瑞飞 [2]
魏同波 [2]
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Patent [2]
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中文 [2]
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制备大尺寸GaN自支撑衬底的方法
专利
专利类型: 发明, 专利号: CN200910235336.5, 公开日期: 2011-08-31
Inventors:
胡强
;
段瑞飞
;
魏同波
;
杨建坤
;
霍自强
;
曾一平
Adobe PDF(338Kb)
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View/Download：1378/267
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Submit date：2011/08/31
在蓝宝石图形衬底上制备无应力GaN厚膜的方法
专利
专利类型: 发明, 专利号: CN200910235335.0, 公开日期: 2011-08-31
Inventors:
胡强
;
段瑞飞
;
魏同波
;
杨建坤
;
霍自强
;
曾一平
Adobe PDF(361Kb)
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View/Download：1504/267
|
Submit date：2011/08/31
