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宽带隙半导体材料SiC 外延生长工艺的研究 学位论文
, 北京: 中国科学院半导体研究所, 2007
Authors:  李家业
Adobe PDF(1534Kb)  |  Favorite  |  View/Download：1005/33  |  Submit date：2009/04/13
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
Authors:  Sun, G (Sun, Guosheng);  Ning, J (Ning, Jin);  Liu, X (Liu, Xingfang);  Zhao, Y (Zhao, Yongmei);  Li, J (Li, Jiaye);  Wang, L (Wang, Lei);  Zhao, W (Zhao, Wanshun);  Wang, L (Wang, Liang);  Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)  |  Favorite  |  View/Download：1647/222  |  Submit date：2010/03/29
Polycrystalline 3c-sic  Resonator  Doping  Silicon-carbide  
无权访问的条目 期刊论文
Authors:  Li Jiaye;  Zhao Yongmei;  Liu Xingfang;  Sun Guosheng;  Luo Muchang;  Wang Lei;  Zhao Wanshun;  Zeng Yiping;  Li Jinmin
Adobe PDF(323Kb)  |  Favorite  |  View/Download：1022/397  |  Submit date：2010/11/23