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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中科院半导体照明研发... [1]
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杨华 [1]
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氧化铟锡透明导电薄膜表面粗化方法
专利
专利类型: 发明, 专利号: CN102244159A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:
郑怀文
;
张逸韵
;
吴奎
;
杨华
;
李璟
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Submit date：2012/09/09
