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Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Li, N;  Zhang, GQ;  Liu, ZL;  Fan, K;  Zheng, ZS;  Lin, Q;  Zhang, ZX;  Lin, CL;  Li, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)  |  收藏  |  浏览/下载：1681/231  |  提交时间：2010/03/29
Simox  Fluorine  Ionizing Radiation  
Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Zhang, GQ;  Liu, ZL;  Li, N;  Zhen, ZS;  Liu, GH;  Lin, Q;  Zhang, ZX;  Lin, CL;  Zhang, GQ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)  |  收藏  |  浏览/下载：1679/231  |  提交时间：2010/03/29
Fluorine  Simox  Charge Trapping  Radiation  Sio2  
Space-grown SI-GaAs and its application 会议论文
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, SMOLENICE, SLOVAKIA, JUN 30-JUL 05, 2002
作者:  Chen NF;  Zhong XG;  Zhang M;  Lin LY;  Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(239Kb)  |  收藏  |  浏览/下载：1821/365  |  提交时间：2010/10/29
Semiinsulating Gallium-arsenide  Floating-zone Growth  Crystal-growth  Zero Gravity  Microgravity  Segregation  Stoichiometry  Silicon  Defects  Insb  
Space grown semi-insulating gallium arsenide single crystal and its application 会议论文
IMPACT OF THE GRAVITY LEVEL ON MATERIALS PROCESSING AND FLUID DYNAMICS, 29 (4), WARSAW, POLAND, JUL, 2000
作者:  Chen NF;  Zhong XR;  Zhang M;  Lin LY;  Chen NF Acad Sinica Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1452/239  |  提交时间：2010/11/15
Semiinsulating Gaas  Stoichiometry  Defects  
1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Zhang W;  Pan Z;  Li LH;  Zhang RK;  Lin YW;  Wu RG;  Zhang W Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1062/0  |  提交时间：2010/10/29
Gainnas  Photodetector  Resonant Cavity Enhanced  High Speed Property  Molecular-beam Epitaxy  Schottky Photodiodes  Performance  Efficiency  Operation  Bandwidth  Design  Si  
Polarization switching current of vertical cavity surface-emitting Lasers in an applied electric field 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Liu WK;  Lin SM;  Wu S;  Cheng P;  Zhang CS;  Liu WK Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(168Kb)  |  收藏  |  浏览/下载：1384/364  |  提交时间：2010/10/29
Birefringence  Polarization  Vcsel  
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)  |  收藏  |  浏览/下载：1219/219  |  提交时间：2010/11/15
Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：1416/268  |  提交时间：2010/11/15
Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Epitaxial growth of SiC on complex substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(196Kb)  |  收藏  |  浏览/下载：1283/261  |  提交时间：2010/11/15
Optical Microscopy  X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Sapphire  Deposition  Films  
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li JM;  Sun GS;  Zhu SR;  Wang L;  Luo MC;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1256/247  |  提交时间：2010/11/15
X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Low-temperature Growth  Films