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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
;
Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)
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  |  
浏览/下载:1813/307
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
Buffer Layer
Lpcvd
Si based quantum cascade structure: from energy band structures design to materials growth
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Hangzhou, PEOPLES R CHINA, JUN 09-14, 2008
作者:
Yu, JZ
;
Han, GQ
;
Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(458Kb)
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浏览/下载:1645/311
  |  
提交时间:2010/03/09
Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test
会议论文
2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, Sanya, PEOPLES R CHINA, JAN 06-09, 2008
作者:
Zhou, W
;
Yang, JL
;
Li, Y
;
Yang, FH
;
Yang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(267Kb)
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收藏
  |  
浏览/下载:1364/372
  |  
提交时间:2010/03/09
Bulge Test
Fracture Property
Silicon Nitride
Weibull Distribution Function
Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P
会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:
Sun, MX
;
Tan, MQ
;
Zhao, M
;
Sun, MX, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(326Kb)
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收藏
  |  
浏览/下载:1367/436
  |  
提交时间:2010/03/09
Antireflective Coatings
Superluminescent Diodes
Double Source Electron Beam Evaporation Technology
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Ji, G
;
Sun, GS
;
Ning, J
;
Liu, XF
;
Zhao, YM
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Ji, G, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(1783Kb)
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收藏
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浏览/下载:1315/225
  |  
提交时间:2010/03/09
The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells
会议论文
PROCEEDINGS OF ISES SOLAR WORLD CONGRESS 2007, Beijing, PEOPLES R CHINA, SEP 18-21, 2007
作者:
Shi, MJ
;
Wang, ZG
;
Zhang, C
;
Peng, WB
;
Zeng, XB
;
Diao, HW
;
Kong, GL
;
Liao, XB
;
Shi, MJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(134Kb)
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收藏
  |  
浏览/下载:1471/265
  |  
提交时间:2010/03/09
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications
会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:
Sun, G (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Liu, X (Liu, Xingfang)
;
Zhao, Y (Zhao, Yongmei)
;
Li, J (Li, Jiaye)
;
Wang, L (Wang, Lei)
;
Zhao, W (Zhao, Wanshun)
;
Wang, L (Wang, Liang)
;
Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)
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收藏
  |  
浏览/下载:1359/222
  |  
提交时间:2010/03/29
Polycrystalline 3c-sic
Resonator
Doping
Silicon-carbide
Zinc phthalocyanine (ZnPc) incorporated into silicon matrix grown by plasma enhanced chemical vapor deposition (PECVD)
会议论文
PROCEEDINGS OF ISES SOLAR WORLD CONGRESS 2007, Beijing, PEOPLES R CHINA, SEP 18-21, 2007
作者:
Zhang, CS
;
Wang, ZG
;
Shi, MJ
;
Peng, WB
;
Diao, HW
;
Liao, XB
;
Long, GL
;
Zeng, XB
;
Zhang, CS, CAS, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(146Kb)
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收藏
  |  
浏览/下载:1340/235
  |  
提交时间:2010/03/09
Photovoltaic Applications
Cells
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(229Kb)
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收藏
  |  
浏览/下载:1535/341
  |  
提交时间:2010/03/29
Buffer Layer
Stress
Photodiodes
Reduction
Detectors
Sapphire
Epitaxy
Growth
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)
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收藏
  |  
浏览/下载:1249/203
  |  
提交时间:2010/03/29
Homoepitaxial Growth
Low-pressure Hot-wall Cvd
Structural And Optical Characteristics
Intentional Doping
Schottky Barrier Diodes