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Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test 会议论文
2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, Sanya, PEOPLES R CHINA, JAN 06-09, 2008
作者:  Zhou, W;  Yang, JL;  Li, Y;  Yang, FH;  Yang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(267Kb)  |  收藏  |  浏览/下载：1415/372  |  提交时间：2010/03/09
Bulge Test  Fracture Property  Silicon Nitride  Weibull Distribution Function  
Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:  Sun, MX;  Tan, MQ;  Zhao, M;  Sun, MX, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(326Kb)  |  收藏  |  浏览/下载：1428/436  |  提交时间：2010/03/09
Antireflective Coatings  Superluminescent Diodes  Double Source Electron Beam Evaporation Technology  
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Ji, G;  Sun, GS;  Ning, J;  Liu, XF;  Zhao, YM;  Wang, L;  Zhao, WS;  Zeng, YP;  Ji, G, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(1783Kb)  |  收藏  |  浏览/下载：1363/225  |  提交时间：2010/03/09
Design of Si-based Electro-optical modulator employed dual capacitors - art. no. 68381B 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:  Yu XG;  Chen SW;  Yu JZ;  Wang QM;  Yu, XG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(432Kb)  |  收藏  |  浏览/下载：1315/325  |  提交时间：2010/03/09
Optoelectronics Devices  
Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer 会议论文
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Sorrento, ITALY, SEP 17-19, 2008
作者:  Cheng BW;  Xue HY;  Hu D;  Han GQ;  Zeng YG;  Bai AQ;  Xue CL;  Luo LP;  Zuo YH;  Wang QM;  Cheng, BW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(331Kb)  |  收藏  |  浏览/下载：1469/312  |  提交时间：2010/03/09
Sige/si(100) Epitaxial-films  
Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Huang BJ;  Xu Zhang;  Zan Dong;  Wei Wang;  Chen HD;  Huang, BJ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(4242Kb)  |  收藏  |  浏览/下载：1294/266  |  提交时间：2010/03/09
Silicon  
Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Wang Y;  Han WH;  Yang X;  Chen JJ;  Yang FH;  Wang, Y, Chinese Acad Sci, Res Ctr Semicond Integrated Technol, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(2039Kb)  |  收藏  |  浏览/下载：1439/318  |  提交时间：2010/03/09
Devices