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Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:  Kang JY;  Shen YW;  Wang ZG;  Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
Adobe PDF(133Kb)  |  收藏  |  浏览/下载：1211/238  |  提交时间：2010/11/15
Defects  Gan  Photoluminescence  Electronic Structures  Yellow Luminescence  Epitaxial-films  Mg  
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2), SINGAPORE, SINGAPORE, JUL 01-06, 2001
作者:  Xie MH;  Cheung SH;  Zheng LX;  Tong SY;  Zhang BS;  Yang H;  Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(1325Kb)  |  收藏  |  浏览/下载：1370/242  |  提交时间：2010/11/15
Molecular-beam Epitaxy  
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
作者:  Jiang DS;  Liang XG;  Sun BQ;  Bian L;  Li LH;  Pan Z;  Wu RG;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(240Kb)  |  收藏  |  浏览/下载：1373/283  |  提交时间：2010/10/29
Luminescence  Localization