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Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文
3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: Art. No. 012094 2011, Wuhan, PEOPLES R CHINA, NOV 02-05, 2010
作者:  Wei M (Wei Meng);  Wang XL (Wang Xiaoliang);  Pan X (Pan Xu);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Zhang ML (Zhang Minglan);  Wang ZG (Wang Zhanguo)
Adobe PDF(668Kb)  |  收藏  |  浏览/下载：2469/494  |  提交时间：2011/07/15
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 464-467, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
作者:  Pan X (Pan Xu);  Wei M (Wei Meng);  Yang CB (Yang Cuibai);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Wang XL (Wang Xiaoliang)
Adobe PDF(396Kb)  |  收藏  |  浏览/下载：3194/831  |  提交时间：2011/07/17
Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zhang ZY;  Li CM;  Jin P;  Meng XQ;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(47Kb)  |  收藏  |  浏览/下载：1435/302  |  提交时间：2010/10/29
Spectrum  
Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As 会议论文
IEEE TRANSACTIONS ON MAGNETICS, Madrid, SPAIN, MAY 04-08, 2008
作者:  Lu J;  Bi JF;  Wang WZ;  Gan HD;  Meng HJ;  Deng JJ;  Zheng HZ;  Zhao JH;  Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(461Kb)  |  收藏  |  浏览/下载：1642/396  |  提交时间：2010/03/09
Magnetic Analysis