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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Li, N
;
Zhang, GQ
;
Liu, ZL
;
Fan, K
;
Zheng, ZS
;
Lin, Q
;
Zhang, ZX
;
Lin, CL
;
Li, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)
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收藏
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浏览/下载:1773/231
  |  
提交时间:2010/03/29
Simox
Fluorine
Ionizing Radiation
Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Zhang, GQ
;
Liu, ZL
;
Li, N
;
Zhen, ZS
;
Liu, GH
;
Lin, Q
;
Zhang, ZX
;
Lin, CL
;
Zhang, GQ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)
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收藏
  |  
浏览/下载:1781/231
  |  
提交时间:2010/03/29
Fluorine
Simox
Charge Trapping
Radiation
Sio2
Space-grown SI-GaAs and its application
会议论文
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, SMOLENICE, SLOVAKIA, JUN 30-JUL 05, 2002
作者:
Chen NF
;
Zhong XG
;
Zhang M
;
Lin LY
;
Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(239Kb)
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收藏
  |  
浏览/下载:1975/365
  |  
提交时间:2010/10/29
Semiinsulating Gallium-arsenide
Floating-zone Growth
Crystal-growth
Zero Gravity
Microgravity
Segregation
Stoichiometry
Silicon
Defects
Insb
Space grown semi-insulating gallium arsenide single crystal and its application
会议论文
IMPACT OF THE GRAVITY LEVEL ON MATERIALS PROCESSING AND FLUID DYNAMICS, 29 (4), WARSAW, POLAND, JUL, 2000
作者:
Chen NF
;
Zhong XR
;
Zhang M
;
Lin LY
;
Chen NF Acad Sinica Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(357Kb)
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收藏
  |  
浏览/下载:1522/239
  |  
提交时间:2010/11/15
Semiinsulating Gaas
Stoichiometry
Defects
1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Zhang W
;
Pan Z
;
Li LH
;
Zhang RK
;
Lin YW
;
Wu RG
;
Zhang W Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:1207/0
  |  
提交时间:2010/10/29
Gainnas
Photodetector
Resonant Cavity Enhanced
High Speed Property
Molecular-beam Epitaxy
Schottky Photodiodes
Performance
Efficiency
Operation
Bandwidth
Design
Si
Polarization switching current of vertical cavity surface-emitting Lasers in an applied electric field
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Liu WK
;
Lin SM
;
Wu S
;
Cheng P
;
Zhang CS
;
Liu WK Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(168Kb)
  |  
收藏
  |  
浏览/下载:1474/364
  |  
提交时间:2010/10/29
Birefringence
Polarization
Vcsel
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Pan Z
;
Li LH
;
Zhang W
;
Wang XU
;
Lin YW
;
Wu RH
;
Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)
  |  
收藏
  |  
浏览/下载:1357/219
  |  
提交时间:2010/11/15
Adsorption
Characterization
Radiation
Molecular Beam Epitaxy
Nitrides
Surface-emitting Laser
Quantum-wells
Operation
Range
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Li LH
;
Pan Z
;
Zhang W
;
Lin YW
;
Wang XY
;
Wu RH
;
Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(109Kb)
  |  
收藏
  |  
浏览/下载:1533/268
  |  
提交时间:2010/11/15
Characterization
Defects
X-ray Diffraction
Molecular Beam Epitaxy
Nitrides
Gaas
Epitaxial growth of SiC on complex substrates
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Sun GS
;
Li JM
;
Luo MC
;
Zhu SR
;
Wang L
;
Zhang FF
;
Lin LY
;
Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(196Kb)
  |  
收藏
  |  
浏览/下载:1395/261
  |  
提交时间:2010/11/15
Optical Microscopy
X-ray Diffraction
Molecular Beam Epitaxy
Semiconducting Silicon Compounds
Sapphire
Deposition
Films
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Li JM
;
Sun GS
;
Zhu SR
;
Wang L
;
Luo MC
;
Zhang FF
;
Lin LY
;
Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(113Kb)
  |  
收藏
  |  
浏览/下载:1370/247
  |  
提交时间:2010/11/15
X-ray Diffraction
Molecular Beam Epitaxy
Semiconducting Silicon Compounds
Low-temperature Growth
Films