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Circular crating optical scanning holography 会议论文
DIFFRACTIVE/HOLOGRAPHIC TECHNOLOGIES AND SPATIAL LIGHT MODULATORS VII, 3951, SAN JOSE, CA, JAN 24-25, 2000
作者:  Liang WG;  Liu SY;  Xie JH;  Zhao DZ;  Liang WG Acad Sinica Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(218Kb)  |  收藏  |  浏览/下载：1333/307  |  提交时间：2010/10/29
Circular Grating  Scanning  Holography  Simulation  
Iron related emission spectra in InP 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Chang Y;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(153Kb)  |  收藏  |  浏览/下载：1422/383  |  提交时间：2010/10/29
Absorption-spectroscopy  Fe  
Design and fabrication of GaAs OMIST photodetector 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Kang XJ;  Lin SM;  Liao QW;  Gao JH;  Liu SA;  Cheng P;  Wang HJ;  Zhang CH;  Wang QM;  Kang XJ Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1777/479  |  提交时间：2010/10/29
Photodetector  Oxidation  Materials Growth  
On the nature of iron in InP: A FTIR study 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Han YJ;  Liu XL;  Lao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(167Kb)  |  收藏  |  浏览/下载：1413/265  |  提交时间：2010/10/29
Iron  Phonon Sideband  Semi-insulating  Inp  
Dynamics of formation of defects in annealed InP 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(208Kb)  |  收藏  |  浏览/下载：1302/387  |  提交时间：2010/10/29
Defects Formation  Hydrogen Related Defects  Semi-insulating  Inp  
Formation mechanism of defects in annealed InP 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES, 3419, TAIPEI, TAIWAN, JUL 09-11, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(383Kb)  |  收藏  |  浏览/下载：1261/254  |  提交时间：2010/10/29
Defects Formation  Hydrogen Related Defects  Semi-insulating  Inp  
The role of hydrogen in semi-insulating INP 会议论文
HYDROGEN IN SEMICONDUCTORS AND METALS, 513, SAN FRANCISCO, CA, APR 13-17, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Qian JJ;  Chen YH;  Wang ZG;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1138/0  |  提交时间：2010/10/29
Hydrogen related defects in InP 会议论文
PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS, 98 (2), SAN DIEGO, CA, MAY 03-08, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(259Kb)  |  收藏  |  浏览/下载：1376/172  |  提交时间：2010/10/29
Twin and grain boundary in InP: A synchrotron radiation study 会议论文
APPLICATIONS OF SYNCHROTRON RADIATION TECHNIQUES TO MATERIALS SCIENCE IV, 524, SAN FRANCISCO, CA, APR 13-17, 1998
作者:  Han YJ;  Jiang JH;  Wang ZG;  Liu XL;  Jiao JH;  Tian YL;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1042Kb)  |  收藏  |  浏览/下载：1221/178  |  提交时间：2010/10/29