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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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收录类别:CPCI\-S
专题:中国科学院半导体研究所(2009年前)
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A Low Power Baseband Chain for CMMB Application
会议论文
2008 11TH IEEE SINGAPORE INTERNATIONAL CONFERENCE ON COMMUNICATION SYSTEMS (ICCS), Guangzhou, PEOPLES R CHINA, NOV 19-21, 2008
作者:
Ma, HP
;
Yuan, F
;
Liu, SL
;
Shi, Y
;
Dai, FF
;
Ma, HP, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(628Kb)
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浏览/下载:1775/326
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提交时间:2010/03/09
Cmmb
Bicmos
Low Pass Filter (Lpf)
Baseband
Temperature Compensation
Variable Gain Amplifier (Vga)
Calibration
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)
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浏览/下载:2146/451
  |  
提交时间:2010/03/09
Performance
Heterostructures
Optimization
Mobility
Advances in high power semiconductor diode lasers - art. no. 682402
会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:
Ma, XY
;
Zhong, L
;
Ma, XY, Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(671Kb)
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浏览/下载:3298/1103
  |  
提交时间:2010/03/09
Laser Diodes
Laser Bar
Stacks
High Power
Power Conversion Efficiency
Reliability
Packaging
Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Yin, HB
;
Wang, XL
;
Hu, GX
;
Ran, JX
;
Xiao, HL
;
Li, JM
;
Yin, HB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3395Kb)
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  |  
浏览/下载:1405/326
  |  
提交时间:2010/03/09
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:
Shen, WJ
;
Duan, Y
;
Wang, J
;
Wang, QY
;
Zeng, YP
;
Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)
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浏览/下载:1789/615
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提交时间:2010/03/29
Zno
Mocvd
Thermal Annealing
Photoluminescence
X-ray Diffraction
Atomic Force Microscopy
Pulsed-laser Deposition
Thin-films
Photoluminescence
Mechanisms
Epitaxy
Cvd
Si
Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Wang, XL
;
Wang, CM
;
Hu, GX
;
Wang, JX
;
Li, JP
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(266Kb)
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  |  
浏览/下载:1991/347
  |  
提交时间:2010/03/29
Molecular-beam Epitaxy
2-dimensional Electron-gas
Bulk Gan
Optimization
Layers
Hemts
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:
Zhao, YW (Zhao, Youwen)
;
Dong, ZY (Dong, Zhiyuan)
;
Dong, HW (Dong, Hongwei)
;
Sun, NF (Sun, Niefeng)
;
Sun, TN (Sun, Tongnian)
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(376Kb)
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  |  
浏览/下载:1594/450
  |  
提交时间:2010/03/29
Stimulated Current Spectroscopy
Current Transient Spectroscopy
Fe-doped Inp
Point-defects
Compensation
Temperature
Donors
Traps
Optimization of InGaAs quantum dots for optoelectronic applications
会议论文
TWENTY SEVENTH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES, CONFERENCE DIGEST, SAN DIEGO, CA, SEP 22-26, 2002
作者:
Duan RF
;
Wang BQ
;
Zhu ZP
;
Zeng YP
;
Duan RF Chinese Acad Sci Novel Mat Dept Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(127Kb)
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  |  
浏览/下载:1189/245
  |  
提交时间:2010/10/29
Infrared Photodetectors
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Cao X
;
Zeng YP
;
Cui LJ
;
Kong MY
;
Pan LA
;
Wang BQ
;
Zhu ZP
;
Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(106Kb)
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  |  
浏览/下载:1655/426
  |  
提交时间:2010/11/15
Molecular Beam Epitaxy
Mobility
Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy
会议论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 47 (4), SEATTLE, WASHINGTON, OCT 26-28, 1999
作者:
Zhang WC
;
Li Z
;
Siddons DP
;
Huang T
;
Zhao LJ
;
Kakuno EM
;
Pietraski P
;
Li CJ
;
Zhang WC Brookhaven Natl Lab Upton NY 11973 USA.
Adobe PDF(623Kb)
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浏览/下载:1572/322
  |  
提交时间:2010/11/15