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Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Yang H;  Liang JW;  Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(92Kb)  |  收藏  |  浏览/下载：1311/308  |  提交时间：2010/10/29
Buffer Layer  Substrate  Diodes  Growth  
MOCVD growth of high quality crack-free GaN on Si(III) substrates 会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:  Zhang BS;  Zhu JJ;  Wang YT;  Yang H;  Zhang BS Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(229Kb)  |  收藏  |  浏览/下载：1417/302  |  提交时间：2010/10/29
Vapor-phase Epitaxy  Layers  Aln  
Influence of heated catalyzer on thermal distribution of substrate in HWCVD system 会议论文
THIN SOLID FILMS, 430 (1-2), DENVER, COLORADO, SEP 10-13, 2002
作者:  Zhang Q;  Zhu M;  Wang L;  Liu E;  Zhu M Chinese Acad Sci Dept Phys Grad Sch POB 3908 Beijing 100039 Peoples R China.
Adobe PDF(223Kb)  |  收藏  |  浏览/下载：1279/238  |  提交时间：2010/11/15
Amorphous-silicon  Deposition