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A novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS:OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Zhang RY;  Dong J;  Zhou F;  Zhu HL;  Shu HY;  Bian J;  Wang LF;  Tian HL;  Wang W;  Zhang RY Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(413Kb)  |  收藏  |  浏览/下载：1325/338  |  提交时间：2010/10/29
Spot-size Converter  Gain  
High-speed DFB laser and EMLs 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Wei W;  Liu GL;  Zhu HL;  Zhang JY;  Wei W Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1334/0  |  提交时间：2010/10/29
Modulator  
Long-wavelength Si-based MQW photodetectors for application in optical fiber communication 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Wang QM;  Li C;  Yang QQ;  Liu YL;  Zhu YQ;  Cheng BW;  Yu JZ;  Wang QM Chinese Acad Sci Inst Semicond State Key Joint Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(254Kb)  |  收藏  |  浏览/下载：1385/298  |  提交时间：2010/10/29
Long-wavelength  Si  Waveguide  Resonant-cavity-enhanced Photodetector  And Optical Communication  
Strained MQW electro-absorption modulators with high extinction ratio and low capacitance 会议论文
2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, NARA, JAPAN, MAY 14-18, 2001
作者:  Sun Y;  Wang W;  Chen WX;  Liu GL;  Zhou F;  Zhu HL;  Sun Y Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(272Kb)  |  收藏  |  浏览/下载：1274/281  |  提交时间：2010/10/29
Electroabsorption  
Epitaxial growth of SiC on complex substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(196Kb)  |  收藏  |  浏览/下载：1305/261  |  提交时间：2010/11/15
Optical Microscopy  X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Sapphire  Deposition  Films  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(148Kb)  |  收藏  |  浏览/下载：1307/394  |  提交时间：2010/11/15
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD 会议论文
THIN SOLID FILMS, 395 (1-2), KANAZAWA, JAPAN, NOV 14-17, 2000
作者:  Feng Y;  Zhu M;  Liu F;  Liu J;  Han H;  Han Y;  Zhu M Chinese Acad Sci Grad Sch Dept Phys POB 3908 Beijing 100039 Peoples R China.
Adobe PDF(101Kb)  |  收藏  |  浏览/下载：1308/315  |  提交时间：2010/11/15
Poly-si  Structure  Hot-wire  Plasma-enhanced Chemical Vapor Deposition (Pecvd)  Chemical-vapor-deposition  Microcrystalline Silicon  Hydrogen  
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(106Kb)  |  收藏  |  浏览/下载：1567/426  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Mobility  
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li JM;  Sun GS;  Zhu SR;  Wang L;  Luo MC;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1275/247  |  提交时间：2010/11/15
X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Low-temperature Growth  Films