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A new half-flash architecture for high speed video ADC 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Shi Y;  Li SZ;  Zhu RH;  Wang SJ;  Shi Y Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(206Kb)  |  收藏  |  浏览/下载：1195/278  |  提交时间：2010/10/29
The design of cascaded resistors in a new analog switch two-step ADC architecture 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Li SZ;  Shi Y;  Zhu RH;  Wang SJ;  Li SZ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(203Kb)  |  收藏  |  浏览/下载：1116/268  |  提交时间：2010/10/29
Growth of Fe doped semi-insulating InP by LP-MOCVD 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Yan XJ;  Zhu HL;  Wang W;  Xu GY;  Zhou F;  Ma CH;  Wang XJ;  Tian HL;  Zhang JY;  Wu RH;  Wang QM;  Yan XJ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(536Kb)  |  收藏  |  浏览/下载：1602/496  |  提交时间：2010/10/29
Semi-insulating  Fe-doped  Mocvd  
1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Chen B;  Wang W;  Wang XJ;  Zhang JY;  Zhu HL;  Zhou F;  Chen B Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(162Kb)  |  收藏  |  浏览/下载：1271/248  |  提交时间：2010/10/29
1.3 Mu m  Complex-coupled Grating  Dfb Laser  
Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition 会议论文
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 177, CAIRNS, AUSTRALIA, JUL 27-AUG 01, 1997
作者:  Yao ZY;  Jiang H;  Liu ZK;  Huang DD;  Qin FG;  Zhu SC;  Sun YX;  Zhu SC Peking Univ Dept Phys Beijing 100871 Peoples R China.
Adobe PDF(166Kb)  |  收藏  |  浏览/下载：1393/281  |  提交时间：2010/11/15
Thin Films  Saturation Magnetization  Uniaxial Anisotropy  
Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions 会议论文
ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES, 523, SAN FRANCISCO, CA, APR 15-16, 1998
作者:  Wang HM;  Zeng YP;  Pan L;  Zhou HW;  Zhu ZP;  Kong MY;  Wang HM Chinese Acad Sci Inst Semicond Div Novel Mat POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1119Kb)  |  收藏  |  浏览/下载：895/155  |  提交时间：2010/10/29