中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共3条，第1-3条 帮助

已选(0)清除 条数/页：   排序方式：
无权访问的条目 期刊论文
作者:  Huang, Beiju;  Wang, Wei;  Dong, Zan;  Zhang, Zanyun;  Guo, Weilian;  Chen, Hongda;  Huang, B.(bjhuang@semi.ac.cn)
Adobe PDF(349Kb)  |  收藏  |  浏览/下载：1283/583  |  提交时间：2012/06/13
无权访问的条目 期刊论文
作者:  Zhao DG (Zhao De-Gang);  Zhang S (Zhang Shuang);  Liu WB (Liu Wen-Bao);  Hao XP (Hao Xiao-Peng);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Wei L (Wei Long);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
Adobe PDF(336Kb)  |  收藏  |  浏览/下载：1252/317  |  提交时间：2010/05/24
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)  |  收藏  |  浏览/下载：1538/203  |  提交时间：2010/03/29
Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes