中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共22条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
无权访问的条目 期刊论文
作者:  Zhao, YW;  Dong, ZY;  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(154Kb)  |  收藏  |  浏览/下载：975/381  |  提交时间：2010/03/08
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Zhao, YW;  Zhang, F;  Zhang, R;  Dong, ZY;  Wei, XC;  Zeng, YP;  Li, JM;  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)  |  收藏  |  浏览/下载：2081/527  |  提交时间：2010/03/09
Zinc Oxide  Defect  Vacancy  
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wei, XC;  Zhao, YW;  Dong, ZY;  Li, JM;  Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(308Kb)  |  收藏  |  浏览/下载：2053/508  |  提交时间：2010/03/09
Zinc Oxide  X-ray Diffraction  Defects  Single Crystal  
无权访问的条目 期刊论文
作者:  Wei, XC;  Zhao, YW;  Dong, ZY;  Li, JM;  Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xcwei@semi.ac.cn
Adobe PDF(345Kb)  |  收藏  |  浏览/下载：1562/681  |  提交时间：2010/03/08
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:  Zhao, YW (Zhao, Youwen);  Dong, ZY (Dong, Zhiyuan);  Dong, HW (Dong, Hongwei);  Sun, NF (Sun, Niefeng);  Sun, TN (Sun, Tongnian);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(376Kb)  |  收藏  |  浏览/下载：1634/450  |  提交时间：2010/03/29
Stimulated Current Spectroscopy  Current Transient Spectroscopy  Fe-doped Inp  Point-defects  Compensation  Temperature  Donors  Traps  
无权访问的条目 期刊论文
作者:  Zhao YW (Zhao Y. W.);  Dong ZY (Dong Z. Y.);  Deng AH (Deng A. H.);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: zhaoyw@red.semi.ac.cn
Adobe PDF(147Kb)  |  收藏  |  浏览/下载：1254/375  |  提交时间：2010/04/11
Electron irradiation-induced defects in InP pre-annealed at high temperature 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Zhao, YW (Zhao, Y. W.);  Dong, ZY (Dong, Z. Y.);  Deng, AH (Deng, A. H.);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(147Kb)  |  收藏  |  浏览/下载：1338/254  |  提交时间：2010/03/29
Indium Phosphide  
无权访问的条目 期刊论文
作者:  Zhao, YW (Zhao, Youwen);  Dong, ZY (Dong, Zhiyuan);  Miao, SS (Miao, Shanshan);  Deng, AH (Deng, Aihong);  Yang, J (Yang, Jun);  Wang, B (Wang, Bo);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(180Kb)  |  收藏  |  浏览/下载：874/267  |  提交时间：2010/03/29
无权访问的条目 期刊论文
作者:  Zhao, YW;  Dong, HW;  Li, JM;  Ling, LY;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(188Kb)  |  收藏  |  浏览/下载：848/299  |  提交时间：2010/03/17
Annealing ambient controlled deep defect formation in InP 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:  Zhao YW;  Dong ZY;  Duan ML;  Sun WR;  Zeng YP;  Sun NF;  Sun TN;  Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc
Adobe PDF(186Kb)  |  收藏  |  浏览/下载：1620/301  |  提交时间：2010/10/29
Fe-doped Inp  Semiinsulating Inp  Point-defects  Pressure  Wafers  Traps