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Growth of Fe doped semi-insulating InP by LP-MOCVD 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Yan XJ;  Zhu HL;  Wang W;  Xu GY;  Zhou F;  Ma CH;  Wang XJ;  Tian HL;  Zhang JY;  Wu RH;  Wang QM;  Yan XJ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(536Kb)  |  收藏  |  浏览/下载：1595/496  |  提交时间：2010/10/29
Semi-insulating  Fe-doped  Mocvd  
Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Yang GW;  Xu ZT;  Xu JY;  Ma XY;  Zhang JM;  Chen LH;  Yang GW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(356Kb)  |  收藏  |  浏览/下载：1412/382  |  提交时间：2010/10/29
Strained Quantum Well  Semiconductor Lasers