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Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Yang H;  Liang JW;  Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(92Kb)  |  收藏  |  浏览/下载：1317/308  |  提交时间：2010/10/29
Buffer Layer  Substrate  Diodes  Growth  
Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001) 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:  Zhu JJ;  Liu SY;  Liang JW;  Zhu JJ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(115Kb)  |  收藏  |  浏览/下载：1486/411  |  提交时间：2010/11/15
Raman Spectrum  Thin Film  Chemical Vapor Deposition  Scattering  Si  
The influence of oxygen content on photoluminescence from Er-doped SiOx 会议论文
LUMINESCENT MATERIALS, 560, SAN FRANCISCO, CA, APR 05-08, 1999
作者:  Chen WD;  Liang JJ;  Hsu CC;  Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：841/0  |  提交时间：2010/10/29
Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix 会议论文
APPLIED SURFACE SCIENCE, 123, CARDIFF, WALES, JUN 23-27, 1997
作者:  Chen YH;  Yang Z;  Wang ZG;  Xu B;  Liang JB;  Qian JJ;  Chen YH Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong.
Adobe PDF(241Kb)  |  收藏  |  浏览/下载：1358/301  |  提交时间：2010/11/15
Znse/gaas Interface  States