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Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zhang ZY;  Li CM;  Jin P;  Meng XQ;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(47Kb)  |  收藏  |  浏览/下载：1455/302  |  提交时间：2010/10/29
Spectrum  
Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As 会议论文
IEEE TRANSACTIONS ON MAGNETICS, Madrid, SPAIN, MAY 04-08, 2008
作者:  Lu J;  Bi JF;  Wang WZ;  Gan HD;  Meng HJ;  Deng JJ;  Zheng HZ;  Zhao JH;  Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(461Kb)  |  收藏  |  浏览/下载：1663/396  |  提交时间：2010/03/09
Magnetic Analysis