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Large-Signal Performance of 1.3 mu m InAs/GaAs quantum-dot lasers 会议论文
, Shanghai, PEOPLES R CHINA, AUG 30-SEP 03, 2009
作者:  Ji;  HM;  Cao;  YL;  Xu PF;  Gu YX;  Ma WQ;  Liu Y;  Wang X;  Xie L;  Yang T;  Ji, HM, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China
Adobe PDF(274Kb)  |  收藏  |  浏览/下载：1861/471  |  提交时间：2010/06/04
Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
作者:  Ji HM;  Yang T;  Cao YL;  Ma WQ;  Cao Q;  Chen LH;  Yang, T, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(244Kb)  |  收藏  |  浏览/下载：1792/328  |  提交时间：2010/03/09
Density-of-states  
A VSLMS Style Tap-length Learning Algorithm for Structure Adaptation 会议论文
2008 11TH IEEE SINGAPORE INTERNATIONAL CONFERENCE ON COMMUNICATION SYSTEMS (ICCS), Guangzhou, PEOPLES R CHINA, NOV 19-21, 2008
作者:  Yu, HM;  Liu, ZL;  Li, GS;  Yu, HM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(137Kb)  |  收藏  |  浏览/下载：1476/241  |  提交时间：2010/03/09
Adaptive Filter  Equalizer  Structure Adaptive  Fractional Tap-length  
A Synthesis Tool for a Tile-Based Heterogeneous FPGA 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Zhang K;  Yu HM;  Chen SL;  Liu ZL;  Zhang, K, Chinese Acad Sci, Inst Semicond, Beijing 10083, Peoples R China.
Adobe PDF(1284Kb)  |  收藏  |  浏览/下载：1183/203  |  提交时间：2010/03/09
Observation of the resonant Raman behavior of individual single-walled carbon nanotubes 会议论文
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, OSAKA, JAPAN, SEP 17-22, 2000
作者:  Tan PH;  Tang Y;  Hu CY;  Li F;  Bai S;  Cheng HM;  You JQ;  Tan PH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1448/0  |  提交时间：2010/10/29
Electric-arc Technique  Large-scale  Scattering  Spectra  Stokes  Modes  
Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions 会议论文
ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES, 523, SAN FRANCISCO, CA, APR 15-16, 1998
作者:  Wang HM;  Zeng YP;  Pan L;  Zhou HW;  Zhu ZP;  Kong MY;  Wang HM Chinese Acad Sci Inst Semicond Div Novel Mat POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1119Kb)  |  收藏  |  浏览/下载：961/155  |  提交时间：2010/10/29