中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共7条，第1-7条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Space-grown SI-GaAs and its application 会议论文
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, SMOLENICE, SLOVAKIA, JUN 30-JUL 05, 2002
作者:  Chen NF;  Zhong XG;  Zhang M;  Lin LY;  Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(239Kb)  |  收藏  |  浏览/下载：1858/365  |  提交时间：2010/10/29
Semiinsulating Gallium-arsenide  Floating-zone Growth  Crystal-growth  Zero Gravity  Microgravity  Segregation  Stoichiometry  Silicon  Defects  Insb  
Space grown semi-insulating gallium arsenide single crystal and its application 会议论文
IMPACT OF THE GRAVITY LEVEL ON MATERIALS PROCESSING AND FLUID DYNAMICS, 29 (4), WARSAW, POLAND, JUL, 2000
作者:  Chen NF;  Zhong XR;  Zhang M;  Lin LY;  Chen NF Acad Sinica Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1471/239  |  提交时间：2010/11/15
Semiinsulating Gaas  Stoichiometry  Defects  
Epitaxial growth of SiC on complex substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(196Kb)  |  收藏  |  浏览/下载：1309/261  |  提交时间：2010/11/15
Optical Microscopy  X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Sapphire  Deposition  Films  
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li JM;  Sun GS;  Zhu SR;  Wang L;  Luo MC;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1278/247  |  提交时间：2010/11/15
X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Low-temperature Growth  Films  
Semi-insulating GaAs grown in outer space 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Chen NF;  Zhong XR;  Lin LY;  Xie X;  Zhang M;  Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(158Kb)  |  收藏  |  浏览/下载：1454/315  |  提交时间：2010/11/15
Gaas  Outer Space  Microgravity  Integrated Circuit  Semiinsulating Gallium-arsenide  Lec-gaas  Defects  Stoichiometry  Segregation  Carbon  Boron  
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Zhang JP;  Sun DZ;  Li XB;  Wang XL;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(127Kb)  |  收藏  |  浏览/下载：1371/307  |  提交时间：2010/11/15
Stress  Growth  
The effects of carbonized buffer layer on the growth of SiC on Si 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Wang YS;  Li JM;  Zhang FF;  Lin LY;  Wang YS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(160Kb)  |  收藏  |  浏览/下载：1095/244  |  提交时间：2010/11/15
Heteroepitaxial Growth  Hydrocarbon Radicals  Si(001) Surface  Beam