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Optical study of localized and delocalized states in GaAsN/GaAs 会议论文
GAN AND RELATED ALLOYS - 2003, 798, Boston, MA, DEC 01-05, 2003
作者:  Xu ZY;  Luo XD;  Yang XD;  Tan PH;  Yang CL;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Xu ZY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(190Kb)  |  收藏  |  浏览/下载:1652/334  |  提交时间:2010/10/29
Molecular-beam Epitaxy  Alloys  Gaas1-xnx  Photoluminescence  Relaxation  
Optical study of electronic states in GaAsN 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Luo XD;  Yang CL;  Huang JS;  Xu ZY;  Liu J;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Luo XD Chinese Acad Sci Inst Semicond NLSM Beijing 100083 Peoples R China.
Adobe PDF(188Kb)  |  收藏  |  浏览/下载:1544/265  |  提交时间:2010/10/29
Molecular-beam Epitaxy  Temperature Photoluminescence  Quantum-well  Alloys  Relaxation  Gaas1-xnx  
SiGe/Si quantum well resonant-cavity-enhanced photodetector 会议论文
TERAHERTZ AND GIGAHERTZ ELECTRONICS AND PHOTONICS II, 4111, SAN DIEGO, CA, JUL 31-AUG 02, 2000
作者:  Li C;  Yang QQ;  Wang HJ;  Zhu JL;  Luo LP;  Yu JZ;  Wang QM;  Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(615Kb)  |  收藏  |  浏览/下载:1767/274  |  提交时间:2010/10/29
Rce Photodetector  Sige/si  Simox  Bragg Reflector  
Normal-incident SiGe/Si MQWs photodetectors operating at 1.3 mu m 会议论文
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899, SINGAPORE, SINGAPORE, DEC 01-03, 1999
作者:  Cheng BW;  Li C;  Yang QQ;  Wang HJ;  Luo LP;  Yu JZ;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(176Kb)  |  收藏  |  浏览/下载:1210/229  |  提交时间:2010/10/29
Sige/si  Mqws  Photodetector  1.3 Mu-m  Si/sio2