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Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Miao, ZH (Miao, Zhenhua);  Gong, Z (Gong, Zheng);  Fang, ZD (Fang, Zhidan);  Niu, ZC (Niu, Zhichuan);  Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)  |  收藏  |  浏览/下载：1658/291  |  提交时间：2010/03/29
Atomic Hydrogen  Molecular Beam Epitaxy  Step Arrays  Molecular-beam Epitaxy  Atomic-hydrogen  Vicinal Surface  Quantum Dots  Growth  Temperature  Irradiation  Mechanism  Mbe  
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 会议论文
MICROELECTRONIC ENGINEERING, 66 (1-4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wang QY;  Wang JH;  Deng HF;  Lin LY;  Wang QY Chinese Acad Sci Inst Semicond Mat Sci Ctr Beijing 100083 Peoples R China.
Adobe PDF(132Kb)  |  收藏  |  浏览/下载：1841/328  |  提交时间：2010/11/15
Neutron Irradiation  Annealing  Defects In Silicon  Spectra  
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 426 (1), FLORENCE, ITALY, MAR 04-06, 1998
作者:  Li Z;  Dezilllie B;  Eremin V;  Li CJ;  Verbitskaya E;  Li Z Brookhaven Natl Lab Bldg 535BPOB 5000 Upton NY 11973 USA.
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：1656/327  |  提交时间：2010/11/15
Strip Detectors  Silicon Detectors  Annealing  Simulation  Irradiation  N-eff  Junction Detectors  Radiation-damage  Models