High quality microcrystalline Si films by hydrogen dilution profile

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	High quality microcrystalline Si films by hydrogen dilution profile
	Gu, JH (Gu, Jinhua); Zhu, MF (Zhu, Meifang); Wang, LJ (Wang, Liujiu); Liu, FZ (Liu, Fengzhen); Zhou, BQ (Zhou, Bingqing); Ding, K (Ding, Kun); Li, GH (Li, Guohua); Zhu, MF, Chinese Acad Sci, Grad Sch, Coll Phys Sci, POB 4588, Beijing 100049, Peoples R China. 电子邮箱地址: mfzhu@gucas.ac.cn
	2006
会议名称	12th International Conference on Thin Films
会议录名称	THIN SOLID FILMS
页码	515 (2): 452-455
会议日期	SEP 15-20, 2002
会议地点	BRATISLAVA, SLOVAKIA
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0040-6090
部门归属	chinese acad sci, grad sch, coll phys sci, beijing 100049, peoples r china; chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of mu c-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, X-c, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of mu c-Si:H films with a high crystalline content is enhanced and the stability of mu c-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP mu c-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-Si:H films. (c) 2006 Published by Elsevier B.V.
关键词	Microcrystalline Si Thin Film
学科领域	半导体材料
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9980
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhu, MF, Chinese Acad Sci, Grad Sch, Coll Phys Sci, POB 4588, Beijing 100049, Peoples R China. 电子邮箱地址: mfzhu@gucas.ac.cn
推荐引用方式 GB/T 7714	Gu, JH ,Zhu, MF ,Wang, LJ ,et al. High quality microcrystalline Si films by hydrogen dilution profile[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2006:515 (2): 452-455.

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