High-output very small aperture laser and its near-field distribution properties - art. no. 60200L

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	High-output very small aperture laser and its near-field distribution properties - art. no. 60200L
	Gan QQ; Song SF; Chen LH; Gan, QQ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
	2005
会议名称	Conference on Optoelectronic Materials and Devices for Optical Communications
会议录名称	Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
页码	6020: L200-L200
会议日期	NOV 07-10, 2005
会议地点	Shanghai, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-6051-6
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	A Very-Small-Aperture Laser with a 250 X 500 nm(2) aperture has been created on a 650nm edge emitting LD. The highest far-field output power is 1.9mW and the power per unit emission area is about 15 MW/mu m(2). The special fabrication process and high output power mechanism are demonstrated respectively. The near-field distribution properties are also analyzed theoretically and experimentally.
关键词	Data-storage
学科领域	光电子学
主办者	SPIE.; Chinese Opt Soc.; China Inst Commun.; Shanghai Jiao Tong Univ.; Alcatel Shanghai Bell.; Shanghai Inst Opt & Fine Mech.; Photon Bridges.; IEEE Commun Soc.; IEEE LEOS.; Opt Soc Amer.; Huawei Technol.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9890
专题	中国科学院半导体研究所（2009年前）
通讯作者	Gan, QQ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Gan QQ,Song SF,Chen LH,et al. High-output very small aperture laser and its near-field distribution properties - art. no. 60200L[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2005:6020: L200-L200.

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