Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates

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	Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates
	Liang S; Zhu HL; Zhou JT; Cheng YB; Pan JQ; Zhao LJ; Wang W; Liang, S, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
	2006
会议名称	International Symposium on Biophotonics, Nanophotonics and Metamaterials
会议录名称	Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials
页码	302-305
会议日期	OCT 16-18, 2006
会议地点	Hangzhou, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-0-7803-9773-6
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates grown by metalorganic chemical vapor deposition (MOCVD) is studied. An abnormal trend of the evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then there is a sudden decrease at 535 degrees C. Photoluminescence (PL) studies show that QDs on vicinal substrates have a narrower PL line width, a longer emission wavelength and a larger PL intensity.
关键词	Chemical-vapor-deposition
学科领域	光电子学
主办者	Zhejiang Univ.; Royal Inst Technol.; Chinese Univ Hong Kong.; SUNY Buffalo.; IEEE LEOS.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9850
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liang, S, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Liang S,Zhu HL,Zhou JT,et al. Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:302-305.

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