A novel DC-DC charge pump circuit for passive RFID transponder
Ha, HL (Ha, Hailong); Ni, WN (Ni, Weining); Shi, Y (Shi, Yin); Dai, FF (Dai, Foster F.); Ha, HL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
2007
会议名称International Workshop on Electron Devices and Semiconductor Technology
会议录名称2007 International Workshop on Electron Devices and Semiconductor Technology
页码206-209
会议日期JUN 03-04, 2007
会议地点Beijing, PEOPLES R CHINA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN978-1-4244-1097-2
部门归属chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要This paper presents a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies. The proposed charge pump has been used as a part of the power supply section of fully integrated passive radio frequency identification(RFID) transponder IC, which has been implemented in a 0.35-um CMOS technology with embedded EEPROM offered by Chartered Semiconductor. The proposed DC/DC charge pump can generate stable output for RFID applications with low power dissipation and high pumping efficiency. The analytical model of the voltage multiplier, the comparison with other charge pumps, the simulation results, and the chip testing results are presented.
关键词Dc/dc Charge Pump Rfid Cmos Operation Uhf
学科领域人工智能
主办者IEEE Electron Devices Soc. Tsinghua Univ
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9834
专题中国科学院半导体研究所(2009年前)
通讯作者Ha, HL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Ha, HL ,Ni, WN ,Shi, Y ,et al. A novel DC-DC charge pump circuit for passive RFID transponder[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2007:206-209.
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