A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication
	Huang BJ (Huang Beiju); Zhang X (Zhang Xu); Liu HJ (Liu Haijun); Liu JB (Liu, Jinbin); Dai XG (Dai Xiaoguang); Zhang Y (Zhang Yu); Chen HD (Chen Hongda); Huang, BJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
	2007
会议名称	International Workshop on Electron Devices and Semiconductor Technology
会议录名称	2007 International Workshop on Electron Devices and Semiconductor Technology
页码	198-201
会议日期	JUN 03-04, 2007
会议地点	Beijing, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-1097-2
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) was designed and fabricated with standard 0.6 mu m CMOS technology. This OEIC circuit consisted of an integrated double photodiode detector (DPD) and a preamplifier. The DPD detector exhibited high bandwidth by screening the bulk-generated diffusion carriers and suppressing the slow diffusion tail effect. The preamplifier exploited the regulated cascode (RGC) configuration as the input stage of receiver, thus isolating the influence of photodiode capacitance and input parasitic capacitance on bandwidth. Testing results showed that the bandwidth of OEIC was 700MHz, indicating the bit rate of 1Gb/s was achieved.
关键词	Complementary Metal-oxide-semiconductor (Cmos)
学科领域	光电子学
主办者	IEEE Electron Devices Soc. Tsinghua Univ
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9830
专题	中国科学院半导体研究所（2009年前）
通讯作者	Huang, BJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Huang BJ ,Zhang X ,Liu HJ ,et al. A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2007:198-201.

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