Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers
	Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Ning, J (Ning, J.); Zhao, YM (Zhao, Y. M.); Luo, MC (Luo, M. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Zeng, YP (Zeng, Y. P.); Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
	2007
会议名称	33rd International Symposium on Compound Semiconductors
会议录名称	Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS
页码	Vol 4 No 5 4 (5): 1609-1612
会议日期	AUG 13-17, 2006
会议地点	Vancouver, CANADA
出版地	PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
出版者	WILEY-V C H VERLAG GMBH
ISSN	1610-1634
部门归属	chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china
摘要	Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers are presented. The growth of the 4H-SiC homoepilayers was carried out in a LPCVD system. The size of the active area of the photodetector was 300 x 300 mu m(2). The dark and illuminated I-V characteristics were measured at reverse biases from 0 V to 30 V at room temperature. The illuminated current was at least two orders of magnitude higher than the dark current at a bias of below 12 V. The photoresponse was measured from 200 nm to 400 nm at different reverse biases and the peak values of the photo response were located at 3 10 nm. The calculated spectral detectivity D* was shown to be higher than 10(13) cmHz(1/2)/W from 260 to 360 nm with a peak value of 5.9 x 10(13) cmHz(1/2) /W at 310 nm. The peak value of the photoresponse was hundreds of times higher than the response at 400 nm, which showed the device had good visible blind performance. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
关键词	Avalanche Photodiodes Area
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9822
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Liu, XF ,Sun, GS ,Li, JM ,et al. Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers[C]. PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY:WILEY-V C H VERLAG GMBH,2007:Vol 4 No 5 4 (5): 1609-1612.

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