Surface morphology evolution of strained InAs/GaAs(331)a films

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Surface morphology evolution of strained InAs/GaAs(331)a films
	Gong, M (Gong, Meng); Fang, ZD (Fang, Zhidan); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan); Gong, M, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
	2006
会议名称	2nd Asian Conference on Nanoscience and Nanotechnology
会议录名称	International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series
页码	Vol 5 No 6 5 (6): 883-888
会议日期	NOV 24-27, 2004
会议地点	Beijing, PEOPLES R CHINA
出版地	PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
摘要	Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.
关键词	Surface Morphology Evolution Inas Nanostructures Island-pit Pairs Molecular-beam Epitaxy Quantum Dots Cooperative Nucleation Heteroepitaxy Transition Islands Growth
学科领域	半导体物理
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9820
专题	中国科学院半导体研究所（2009年前）
通讯作者	Gong, M, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Gong, M ,Fang, ZD ,Miao, ZH ,et al. Surface morphology evolution of strained InAs/GaAs(331)a films[C]. PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2006:Vol 5 No 6 5 (6): 883-888.

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