Knowledge Management System Of Institute of Semiconductors,CAS
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers | |
Fang, ZD (Fang, Zhidan); Gong, M (Gong, Meng); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan); Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. | |
2006 | |
会议名称 | 2nd Asian Conference on Nanoscience and Nanotechnology |
会议录名称 | International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series |
页码 | Vol 5 No 6 5 (6): 847-852 |
会议日期 | NOV 24-27, 2004 |
会议地点 | Beijing, PEOPLES R CHINA |
出版地 | PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE |
出版者 | WORLD SCIENTIFIC PUBL CO PTE LTD |
部门归属 | chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china |
摘要 | We investigate about controlling of photoluminescence (PL) wavelengths of InAs/GaAs self-assembled quantum dots (QDs) sandwiched with combination strained-buffer layer (CSBL) and combination strained-reducing layer (CSRL). The emission peak position of QDs is red-shifted to 1.37 mu m. The density of the QDs is increased to 1.17x10(10) cm(-2). It is indicated that optical properties of QDs could be improved by optimizing of the buffer and covering layers for the QDs. These results may provide a new way to further developing GaAs-based 1.3 mu m light sources. |
关键词 | Quantum Dots Photoluminescence Combination Layer 1.3 Mu-m Lasers Inalas |
学科领域 | 半导体物理 |
收录类别 | CPCI-S |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/9818 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. |
推荐引用方式 GB/T 7714 | Fang, ZD ,Gong, M ,Miao, ZH ,et al. Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers[C]. PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2006:Vol 5 No 6 5 (6): 847-852. |
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