Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures
	Lei W; Chen YH; Jin P; Xu B; Ye XL; Wang ZG; Huang XQ; Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
	2006
会议名称	2nd Asian Conference on Nanoscience and Nanotechnology
会议录名称	International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series
页码	Vol 5 No 6 5 (6): 729-735
会议日期	NOV 24-27, 2004
会议地点	Beijing, PEOPLES R CHINA
出版地	PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
部门归属	acad sinica, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
摘要	We present lateral intersubband photocurrent (PC) study on self-assembled InAs/InAIAs/InP(001) nanostructures in normal incidence. With the help of interband excitation, a broad PC signal has been observed in the photon energy range of 150-630 meV arising from the bound-to-continuum intersubband absorption in the InAs nanostructures. The large linewidth of the intersubband PC signal is due to the size inhomogeneity of the nanostructures. With the increase of the interband excitation the intersubband PC signal firstly increases with a redshift of PC peak and reaches its maximum, then decreases with no peak shift. The increase and redshift of the PC signal at low excitation level can be explained by the state filling effect. However, the decrease of PC signal at high excitation level may be due to the change of the mobility and lifetime of the electrons. The intersubband PC signal decreases when the temperature is increased, which can be explained by the decrease of the mobility and lifetime of the electrons and the thermal escape of electrons.
关键词	Lateral Intersubband Photocurrent
学科领域	半导体材料
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9814
专题	中国科学院半导体研究所（2009年前）
通讯作者	Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Lei W,Chen YH,Jin P,et al. Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures[C]. PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2006:Vol 5 No 6 5 (6): 729-735.

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