Terahertz pulse generation with LT-GaAs photoconductive antenna
Cui, LJ (Cui, L. J.); Zeng, YP (Zeng, Y. P.); Zhao, GZ (Zhao, G. Z.); Cui, LJ, Chinese Acad Med Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China.
2006
会议名称Joint 31st International Conference on Infrared and Millimeter Waves/14th International Conference on Terahertz Electronics
会议录名称Conference Digest of the 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics
页码143-143
会议日期SEP 18-22, 2006
会议地点Shanghai, PEOPLES R CHINA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN978-1-4244-0399-8
部门归属chinese acad med sci, inst semicond, novel mat lab, beijing 100083, peoples r china
摘要Low-temperature-grown GaAs (LT-GaAs) of 1-um thickness was grown at 250 degrees C on semi-insulating GaAs (001) substrate using EPI GEN-II solid-source MBE system. The sample was then in situ annealed for 10 min at 600 degrees C under As-rich condition. THz emitters were fabricated on this LTGaAs with three different photoconductive dipole antenna gaps of 1-mm, 3-mm, and 5-mm, respectively. The spectral bandwidth of 2.75 THz was obtaind with time domain spectroscopy. It is found that THz emission efficiency is increased with decreasing antenna gap. Two carrier lifetimes, 0.469 ps and 3.759 ps, were obtained with time-resolved transient reflection-type pump-probe spectroscopy.
关键词Temperature-grown Gaas Carrier Dynamics Emission
学科领域半导体材料
主办者Chinese Acad Sci, Shanghai Inst Tech Phys.; SE Univ.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; IEEE MTT S.; IEEE Nanjing Joint Chapter.; IEEE Shanghai Sub Sect.; Shanghai Int Culture Assoc.; Chinese Phys Soc.; Chinese Opt Soc.; Chinese Inst Elect.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9806
专题中国科学院半导体研究所(2009年前)
通讯作者Cui, LJ, Chinese Acad Med Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Cui, LJ ,Zeng, YP ,Zhao, GZ ,et al. Terahertz pulse generation with LT-GaAs photoconductive antenna[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:143-143.
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