SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
氧化锌体单晶生长过程中的直接掺杂方法
董志远; 赵有文; 杨 俊; 段满龙 
2009-05-27
Rights Holder中科院半导体研究所
Date Available3996
Country中国
Subtype发明
Application Date2007-11-21
Language中文
Status公开
Application NumberCN200710177781
Patent Agent汤宝平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/9162
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
董志远,赵有文,杨 俊,等. 氧化锌体单晶生长过程中的直接掺杂方法[P]. 2009-05-27.
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