Knowledge Management System Of Institute of Semiconductors,CAS
| 一种氮化物薄膜外延生长的方法 | |
| 闫发旺; 高海永; 张 扬; 张会肖; 李晋闽; 曾一平; 王国宏 | |
| 2009-06-03 | |
| Rights Holder | 中科院半导体研究所 |
| Date Available | 3996 |
| Country | 中国 |
| Subtype | 发明 |
| Application Date | 2007-11-28 |
| Language | 中文 |
| Status | 公开 |
| Application Number | CN200710178326 |
| Patent Agent | 汤宝平 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/9144 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | 闫发旺,高海永,张 扬,等. 一种氮化物薄膜外延生长的方法[P]. 2009-06-03. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 3507.pdf（443KB） | 限制开放 | -- | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment