SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
一种采用CMOS工艺制作的差分硅光电探测器
陈弘达; 黄北举; 张 旭 
2009-06-24
Rights Holder中科院半导体研究所
Date Available3998
Country中国
Subtype发明
Application Date2007-12-19
Language中文
Status公开
Application NumberCN200710179893
Patent Agent汤宝平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/9114
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈弘达,黄北举,张 旭 . 一种采用CMOS工艺制作的差分硅光电探测器[P]. 2009-06-24.
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