Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y
	Cheng YB; Pan JQ; Zhou F; Wang BJ; Zhu HL; Zhao LJ; Wang W; Cheng, YB, Chinese Acad Sci, Inst Semicond, State Key lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
	2007
会议名称	Conference on Optoelectronic Materials and Devices II
会议录名称	OPTOELECTRONIC MATERIALS AND DEVICES II
页码	6782: Y7820-Y7820 Part 1-2
会议日期	NOV 02-05, 2007
会议地点	Wuhan, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	978-0-8194-6945-8
部门归属	[cheng, yuanbing; pan, jiaoqing; zhou, fan; wang, baojun; zhu, hongliang; zhao, lingjuan; wang, wei] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250(mu m) DFB and 170(mu m) EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.
关键词	Butt Joint
学科领域	光电子学
主办者	SPIE.; Chinese Opt Soc.; China Inst Commun.; Peoples Govt Wuhan Municipal.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7860
专题	中国科学院半导体研究所（2009年前）
通讯作者	Cheng, YB, Chinese Acad Sci, Inst Semicond, State Key lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Cheng YB,Pan JQ,Zhou F,et al. Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2007:6782: Y7820-Y7820 Part 1-2.

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