Knowledge Management System Of Institute of Semiconductors,CAS
The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M | |
Yang, H; Chen, Y; Wang, LB; Yi, XY; Fan, JM; Liu, ZQ; Yang, FH; Wang, LC; Wang, GH; Zeng, YP; Li, JM; Yang, H, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China. | |
2008 | |
Conference Name | Conference on Solid State Lighting and Solar Energy Technologies |
Source Publication | SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES |
Pages | 6841: M8410-M8410 |
Conference Date | NOV 12-14, 2007 |
Conference Place | Beijing, PEOPLES R CHINA |
Publication Place | 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
Publisher | SPIE-INT SOC OPTICAL ENGINEERING |
ISSN | 0277-786X |
ISBN | 978-0-8194-7016-4 |
metadata_83 | [yang, hua; chen, yu; wang, libin; yi, xiaoyan; fan, jingmei; liu, zhiqiang; yang, fuhua; wang, liangchen; wang, guohong; zeng, yiping; li, jinmin] chinese acad sci, inst semicond, r&d ctr semicond lighting, beijing 100083, peoples r china |
Abstract | We investigate the relation between the thickness of sapphire substrates and the extraction efficiency of LED. The increasing about 5% was observed in the simulations and experiments when the sapphire thickness changed from 100um to 200um. But the output power increasing is inconspicuous when the thickness is more than 200um. The structure on bottom face of sapphire substrates can enhance the extraction efficiency of GaN-based LED, too. The difference of output power between the flip-chip LED with smooth bottom surface and the LED with roughness bottom surface is about 50%, where only a common sapphire grinding process is used. But for those LEDs grown on patterned sapphire substrate the difference is only about 10%. Another kind of periodic pattern on the bottom of sapphire is fabricated by the dry etch method, and the output of the back-etched LEDs is improved about 50% than a common. case. |
Keyword | Gan-based Led Grinding Ray Tracing |
Subject Area | 光电子学 |
Funding Organization | SPIE.; Chinese Opt Soc. |
Indexed By | CPCI-S |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/7828 |
Collection | 中国科学院半导体研究所(2009年前) |
Corresponding Author | Yang, H, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China. |
Recommended Citation GB/T 7714 | Yang, H,Chen, Y,Wang, LB,et al. The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2008:6841: M8410-M8410. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
694.pdf(297KB) | 限制开放 | -- | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment