Characteristics of triangle and square InP/InGaAsP microlasers

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Characteristics of triangle and square InP/InGaAsP microlasers
	Huang YZ; Wang SJ; Che KJ; Hu YH; Du Y; Yu LJ; Huang, YZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
	2008
会议名称	10th International Conference on Transparent Optical Networks
会议录名称	ICTON 2008: PROCEEDINGS OF 2008 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS
页码	VOL 4: 238-241
会议日期	JUN 22-26, 2008
会议地点	Athens, GREECE
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
部门归属	[huang, yong-zhen; wang, shi-jiang; che, kai-jun; hu, yong-hong; du, yun; yu, li-jun] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Directional emission triangle and square InGaAsP/InP lasers have been fabricated by standard photolithography, inductively coupled plasma etching technique combined with wet chemical etching process. In this article, the characteristics of the microcavity lasers are presented. For an equilateral triangle microcavity laser with the side length of 30 mu m, we got the laser spectra fitted very well with the mode wavelength formulate LIP to the 8(th) transverse mode at room temperature. But the laser spectra are usually more complex than the formulae for the lasers, especially for the lasers with a smaller side length. For a square microcavity laser with side length of 20 mu m, we observed the mode competition between the Fabry-Perot (FP) modes and Whispering-Gallery (WG) modes at 200K. The output spectra below the threshold have the mode interval of FP modes with a large mode interval, and the laser spectra agree very well with the WG modes, which have mode interval less than the FP modes. The output spectra are dominated by the FP modes below the threshold, because the FP modes have a higher output coupling efficiency than the WG modes.
关键词	Semiconductor Lasers
学科领域	光电子学
主办者	Natl Inst Telecommun.; Athens Informat Technol.; grnet.; INTRACOM TELECOM.; COST Action 291.; IEEE/LEOS.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7760
专题	中国科学院半导体研究所（2009年前）
通讯作者	Huang, YZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Huang YZ,Wang SJ,Che KJ,et al. Characteristics of triangle and square InP/InGaAsP microlasers[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOL 4: 238-241.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
652.pdf（271KB）			限制开放	--	请求全文