Nanoelectronic Circuit Architectures Based on Single-Electron Turnstiles

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Nanoelectronic Circuit Architectures Based on Single-Electron Turnstiles
	Zhang, WC; Wu, NJ; Zhang, WC, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.
	2008
会议名称	2nd IEEE International Nanoelectronics Conference
会议录名称	2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE
页码	VOLS 1-3: 515-519
会议日期	MAR 24-27, 2008
会议地点	Shanghai, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-1572-4
部门归属	[zhang, wancheng; wu, nan-jian] chinese acad sci, state key lab superlattices & microstruct, inst semicond, beijing 100083, peoples r china
摘要	Single-electron devices (SEDs) have ultra-low power dissipation and high integration density, which make them promising candidates as basic circuit elements of the next generation VLSI circuits. In this paper, we propose two novel circuit single-electron architectures: the single-electron simulated annealing algorithm (SAA) circuit and the single-electron cellular neural network (CNN). We used the MOSFET-based single-electron turnstile [1] as the basic circuit element. The SAA circuit consists of the voltage-controlled single-electron random number generator [2] and the single-electron multiple-valued memories (SEMVs) [3]. The random-number generation and variable variations in SAA are easily achieved by transferring electrons using the single-electron turnstile. The CNN circuit used the floating-gate single-electron turnstile as the neural synapses, and the number of electrons is used to represent the cells states. These novel circuits are promising in future nanoscale integrated circuits.
关键词	Transistors Technology Devices
学科领域	微电子学
主办者	IEEE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7750
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang, WC, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, WC,Wu, NJ,Zhang, WC, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.. Nanoelectronic Circuit Architectures Based on Single-Electron Turnstiles[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-3: 515-519.

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