中文版 | English

在结果中检索

SEMI OpenIR  > 半导体材料科学中心

浏览/检索结果: 共3条，第1-3条 帮助

限定条件                    
已选(0)清除 条数/页：   排序方式：
Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文
3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: Art. No. 012094 2011, Wuhan, PEOPLES R CHINA, NOV 02-05, 2010
作者:  Wei M (Wei Meng);  Wang XL (Wang Xiaoliang);  Pan X (Pan Xu);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Zhang ML (Zhang Minglan);  Wang ZG (Wang Zhanguo)
Adobe PDF(668Kb)  |  收藏  |  浏览/下载：2424/494  |  提交时间：2011/07/15
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 464-467, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
作者:  Pan X (Pan Xu);  Wei M (Wei Meng);  Yang CB (Yang Cuibai);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Wang XL (Wang Xiaoliang)
Adobe PDF(396Kb)  |  收藏  |  浏览/下载：3118/831  |  提交时间：2011/07/17
Donor defect in P-diffused bulk ZnO single crystal 会议论文
, Rio de Janeiro, BRAZIL, 2009
作者:  Zhao YW (Zhao Youwen);  Zhang R (Zhang Rui);  Zhang F (Zhang Fan);  Dong ZY (Dong Zhiyuan);  Yang J (Yang Jun);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China
Adobe PDF(321Kb)  |  收藏  |  浏览/下载：2268/471  |  提交时间：2010/10/11
Zinc Oxide  Doping  Defect