Chinese | English
SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
采用氢致自催化法生长含铟氮化物纳米材料的方法
康亭亭; 刘祥林
2009-02-18
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2007-08-15
Language中文
Application NumberCN200710120284.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4301
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 康亭亭,刘祥林. 采用氢致自催化法生长含铟氮化物纳米材料的方法[P]. 2009-02-18.
Files in This Item:
File Name/Size DocType Version Access License
CN200710120284.8.pdf（735KB） 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[康亭亭]'s Articles
[刘祥林]'s Articles
Baidu academic
Similar articles in Baidu academic
[康亭亭]'s Articles
[刘祥林]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[康亭亭]'s Articles
[刘祥林]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.