SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
高晶体质量氮化物外延生长所用图形衬底的制备方法
张扬; 闫发旺; 高海永; 曾一平; 王国宏; 张会肖; 李晋闽
2008-10-29
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2007-04-25
Language中文
Application NumberCN200710098702.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4233
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张扬,闫发旺,高海永,等. 高晶体质量氮化物外延生长所用图形衬底的制备方法[P]. 2008-10-29.
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