Knowledge Management System Of Institute of Semiconductors,CAS
| 高晶体质量氮化物外延生长所用图形衬底的制备方法 | |
| 张扬; 闫发旺; 高海永; 曾一平; 王国宏; 张会肖; 李晋闽 | |
| 2008-10-29 | |
| Date Available | 2009-06-04 ; 2009-06-11 |
| Subtype | 发明 |
| Application Date | 2007-04-25 |
| Language | 中文 |
| Application Number | CN200710098702.8 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/4233 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | 张扬,闫发旺,高海永,等. 高晶体质量氮化物外延生长所用图形衬底的制备方法[P]. 2008-10-29. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| CN200710098702.8.pdf（561KB） | 限制开放 | -- | Application Full Text | |||
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