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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
基于氮化铝缓冲层的硅基3C-碳化硅异质外延生长方法
赵永梅; 孙国胜; 刘兴昉; 李家业; 王雷; 赵万顺; 李晋闽; 曾一平
2008-10-08
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2007-04-05
Language中文
Application NumberCN200710065183.5
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4213
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 赵永梅,孙国胜,刘兴昉,等. 基于氮化铝缓冲层的硅基3C-碳化硅异质外延生长方法[P]. 2008-10-08.
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CN200710065183.5.pdf（365KB） 限制开放--Application Full Text
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